MMG600WB065TLA6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG600WB065TLA6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 1760
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 710
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 110
Carga total de la puerta (Qg), typ, nC: 6500
Paquete / Cubierta: MODULE
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MMG600WB065TLA6EN Datasheet (PDF)
mmg600wb065tla6en.pdf
MMG600WB065TLA6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl
mmg600wb065tlb6en.pdf
MMG600WB065TLB6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl
mmg600wb065b6en.pdf
MMG600WB065B6EN650V 600A IGBT ModuleMarch 2017 Preliminary RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl
mmg600wb065b6tc.pdf
MMG600WB065B6TC650V 600A IGBT ModuleDecember 2020 Preliminary RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATION
Otros transistores... MMG50S170B6TC , MMG50W060XB6EN , MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , RJP30E2DPP-M0 , MMG600WB065TLB6EN , MMG600WB120B6E4N , MMG600WB120B6TC , MMG600WB170B , MMG600WB170B6E4N , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ