MMG75H060XB6EN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG75H060XB6EN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 95 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Encapsulados: MODULE

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MMG75H060XB6EN datasheet

 ..1. Size:531K  macmic
mmg75h060xb6en.pdf pdf_icon

MMG75H060XB6EN

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 8.1. Size:354K  macmic
mmg75hb120h6un.pdf pdf_icon

MMG75H060XB6EN

MMG75HB120H6UN 1200V 75A Four-Pack Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP

 8.2. Size:292K  macmic
mmg75hb060h6en.pdf pdf_icon

MMG75H060XB6EN

MMG75HB060H6EN 600V 75A Four-Pack Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.3. Size:968K  macmic
mmg75h120x6tc.pdf pdf_icon

MMG75H060XB6EN

MMG75H120X6TC 1200V 75A Six-Pack Module May 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

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