MMG75S120UA6TN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG75S120UA6TN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 348 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 105 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Encapsulados: MODULE

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MMG75S120UA6TN datasheet

 ..1. Size:319K  macmic
mmg75s120ua6tn.pdf pdf_icon

MMG75S120UA6TN

MMG75S120UA6TN 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses AP

 5.1. Size:283K  macmic
mmg75s120b6un.pdf pdf_icon

MMG75S120UA6TN

MMG75S120B6UN 1200V 75A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATI

 5.2. Size:342K  macmic
mmg75s120b6hn.pdf pdf_icon

MMG75S120UA6TN

MMG75S120B6HN 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

 5.3. Size:400K  macmic
mmg75s120b6c.pdf pdf_icon

MMG75S120UA6TN

MMG75S120B6C 1200V 75A IGBT Module May 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) V with positive temperature coefficient CE(sat) Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIO

Otros transistores... MMG75HB060B6EN, MMG75J120U6TC, MMG75J120U6TN, MMG75J120UZ6TC, MMG75J120UZ6TN, MMG75S060B6TC, MMG75S120B6TC, MMG75S120B6UC, MBQ50T65FDSC, MMG75S170B, MMG75S170B6TC, MMG75W060XB6EN, MMG75W120X6TC, MMG75W120XB6TC, MMG75W120XT6TC, MMG75WD120XB6T4N, MMG75WD120XB6TC