MMG75WD120XB6TC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG75WD120XB6TC

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 385 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 110 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Encapsulados: MODULE

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MMG75WD120XB6TC datasheet

 0.1. Size:291K  macmic
mmg75wd120xb6tc.pdf pdf_icon

MMG75WD120XB6TC

MMG75WD120XB6TC 1200V 75A PIM Module August 2018 Version 01 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas

 0.2. Size:1571K  macmic
mmg75wd120xb6t4n.pdf pdf_icon

MMG75WD120XB6TC

MMG75WD120XB6T4N 1200V 75A PIM Module May 2016 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration CHIP(Trench+Field Stop IGBT4 and EmCon4 diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp

 3.1. Size:1512K  macmic
mmg75wd120xt6tc.pdf pdf_icon

MMG75WD120XB6TC

MMG75WD120XT6TC 1200V 75A Rectifier+Inverter Module April 2020 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insul

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