MMG75WD120XB6TC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG75WD120XB6TC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 385 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 110 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Paquete / Cubierta: MODULE
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MMG75WD120XB6TC Datasheet (PDF)
mmg75wd120xb6tc.pdf
MMG75WD120XB6TC1200V 75A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper bas
mmg75wd120xb6t4n.pdf
MMG75WD120XB6T4N1200V 75A PIM ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration CHIP(Trench+Field Stop IGBT4 and EmCon4 diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp
mmg75wd120xt6tc.pdf
MMG75WD120XT6TC1200V 75A Rectifier+Inverter ModuleApril 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insul
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