HM15N120A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM15N120A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 140
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 28
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 47
Capacitancia de salida (Cc), typ, pF: 87
Paquete / Cubierta: TO3P
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HM15N120A Datasheet (PDF)
hm15n120a.pdf
IGBT Features 1200V,15A VCE(sat)(typ.)=2.6V@VGE=15VIC=15A High speed switching Higher system efficiency Soft current turn-off waveforms General Description IGBTs offer lower losses and higher energy efficiency H&M for application such as IH (induction heating),UPS, General inverter and other soft switching applications. Absolute
hm15n10d.pdf
HM15N10D N-Channel Enhancement Mode Power MOSFET Description The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =15A RDS(ON)
hm15n10k.pdf
HM15N10KN-Channel Enhancement Mode Power MOSFET Description The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)
phm15nq20t.pdf
PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta
hm15n50 hm15n50f.pdf
HM15N50/HM15N50FHM15N50/HM15N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 15.0A, 500V, RDS(on) = 0.42 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast s witchingminimize o n-state r esistance, pr ovide superior switc
hm15n02q.pdf
HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =15A RDS(ON)
Otros transistores... SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , IRG4PC50UD , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ