HM25N120T Todos los transistores

 ..1. Size:542K  cn hmsemi
 hm25n120t.pdf

IGBT Features 1200V, 25A ,V =2.3 V@V =15V CE(sat)(typ.) GE High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description DAXIN s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute Maxinmun Ratings

 8.1. Size:62K  chenmko
 chm25n15lpagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM25N15LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capa

 9.1. Size:277K  philips
 phm25nq10t.pdf

PHM25NQ10T TrenchMOS standard level FET Rev. 03 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile. 1.3 Applications DC-to-DC primary side Porta

 9.2. Size:642K  cn hmsemi
 hm25n50.pdf

HM25N50 General Description VDSS 500 V HM25N50 the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 9.3. Size:583K  cn hmsemi
 hm25n03d.pdf

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 9.4. Size:835K  cn hmsemi
 hm25n08d.pdf

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

 9.5. Size:674K  cn hmsemi
 hm25n06q.pdf

HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 9.6. Size:462K  cn hmsemi
 hm25n06d.pdf

HM25N06D Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 9.7. Size:547K  cn hmsemi
 hm25n03q.pdf

HM25N03Q Description The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)