IXGA12N100A Todos los transistores

 

IXGA12N100A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA12N100A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4(max) V @25℃

trⓘ - Tiempo de subida, typ: 200 nS

Encapsulados: TO263

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IXGA12N100A datasheet

 ..1. Size:51K  ixys
 ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf pdf_icon

IXGA12N100A

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C24 A TO-263 (IXGA) IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A

 0.1. Size:116K  ixys
 ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf pdf_icon

IXGA12N100A

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC =

 6.1. Size:201K  ixys
 ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf pdf_icon

IXGA12N100A

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G

 6.2. Size:578K  ixys
 ixga12n120a2 ixgp12n120a2.pdf pdf_icon

IXGA12N100A

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1

MOSTRAR MÁS

Otros transistores... IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , MBQ40T65FDSC , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IXGA12N60CD1 , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 .

 

 

 


 
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