LEGM200BA120L2H Todos los transistores

 

LEGM200BA120L2H IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LEGM200BA120L2H

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 950 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 125 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 64 nS

Encapsulados: MODULE

 Búsqueda de reemplazo de LEGM200BA120L2H IGBT

- Selección ⓘ de transistores por parámetros

 

LEGM200BA120L2H datasheet

 0.1. Size:1328K  cn leading energy
legm200ba120l2h.pdf pdf_icon

LEGM200BA120L2H

Sep.2020 LEGM200BA120L2H IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Conditio

 6.1. Size:1345K  cn leading energy
legm200bh120l2k.pdf pdf_icon

LEGM200BA120L2H

Sep.2020 LEGM200BH120L2K IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Condi

 9.1. Size:465K  cn leading energy
legm25be120e2h.pdf pdf_icon

LEGM200BA120L2H

Mar.2020 LEGM25BE120E2H IGBT Power Module Features Applications VCE=1200V IC=25A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 175 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame

Otros transistores... DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , IRG4PC50UD , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , KWFFP10R12NS3 .

History: IRGP35B60PDPBF

 

 

 


History: IRGP35B60PDPBF

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet | k3797 mosfet

 

 

↑ Back to Top
.