LEGM25BE120E2H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LEGM25BE120E2H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 170 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.01 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 160 nS
Paquete / Cubierta: MODULE
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LEGM25BE120E2H Datasheet (PDF)
legm25be120e2h.pdf

Mar.2020 LEGM25BE120E2H IGBT Power Module Features: Applications: VCE=1200V IC=25A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 175 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm200bh120l2k.pdf

Sep.2020LEGM200BH120L2KIGBT Power ModuleFeatures: Applications: VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Condi
legm200ba120l2h.pdf

Sep.2020LEGM200BA120L2HIGBT Power ModuleFeatures Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2 Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Conditio
Otros transistores... DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , IRG4PC50UD , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , KWFFP10R12NS3 , KWGFP25R12NS3 , KWMFP40R12NS3 .
History: MMG75H060XB6EN
History: MMG75H060XB6EN



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