LEGM75BE120L5H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LEGM75BE120L5H
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.78 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.8(typ) V
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 35 nS
Paquete / Cubierta: MODULE
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LEGM75BE120L5H Datasheet (PDF)
legm75be120l5h.pdf
Mar.2020 LEGM75BE120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75bf120l5h.pdf
Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
legm75td120e2h.pdf
Mar.2020 LEGM75TD120E2H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame
Otros transistores... DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , IRG4PC50U , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , KWFFP10R12NS3 , KWGFP25R12NS3 , KWMFP40R12NS3 , KWRFF100R12SWM , KWRFF40R12SWM .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2