LEGM75BE120L5H Todos los transistores

 

LEGM75BE120L5H IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LEGM75BE120L5H

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 125 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.78 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Encapsulados: MODULE

 Búsqueda de reemplazo de LEGM75BE120L5H IGBT

- Selección ⓘ de transistores por parámetros

 

LEGM75BE120L5H datasheet

 ..1. Size:462K  cn leading energy
legm75be120l5h.pdf pdf_icon

LEGM75BE120L5H

Mar.2020 LEGM75BE120L5H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame

 7.1. Size:462K  cn leading energy
legm75bf120l5h.pdf pdf_icon

LEGM75BE120L5H

Mar.2020 LEGM75BF120L5H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame

 8.1. Size:853K  cn leading energy
legm75td120e2h.pdf pdf_icon

LEGM75BE120L5H

Mar.2020 LEGM75TD120E2H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit E2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame

Otros transistores... DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , FGH30S130P , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , KWFFP10R12NS3 , KWGFP25R12NS3 , KWMFP40R12NS3 , KWRFF100R12SWM , KWRFF40R12SWM .

History: IRGP6690D-EPBF

 

 

 


History: IRGP6690D-EPBF

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460 | irfz44n mosfet

 

 

↑ Back to Top
.