MG100HF12MIC1 Todos los transistores

 

MG100HF12MIC1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG100HF12MIC1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 680 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 290 pF
   Qgⓘ - Carga total de la puerta, typ: 200 nC
   Paquete / Cubierta: MODULE

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MG100HF12MIC1 Datasheet (PDF)

 ..1. Size:315K  cn yangzhou yangjie elec
mg100hf12mic1.pdf

MG100HF12MIC1
MG100HF12MIC1

PRELIMINARY MG100HF12MIC1 RoHS COMPLIANT IGBT Modules VCES 1200V IC 100A Applications High frequency switching application Medical applications Motion/servo control UPS systems Features Circuit High short circuit capability, self limiting short circuit current IGBT CHIP (Trench+Field Stop technology) VCE(sat) with positive temperature coef

 4.1. Size:509K  cn yangzhou yangjie elec
mg100hf12mrc1.pdf

MG100HF12MIC1
MG100HF12MIC1

MG100HF12MRC1 RoHS COMPLIANT IGBT Modules VCES 1200V IC 100A Applications Industrial Inverters Servo Applications SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10s Low Stray Inductance Low Saturation Voltage Ultra Low loss HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Absolute

 8.1. Size:292K  macmic
mmg100hb060h6en.pdf

MG100HF12MIC1
MG100HF12MIC1

MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.2. Size:1446K  macmic
mmg100h120h6hn.pdf

MG100HF12MIC1
MG100HF12MIC1

MMG100H120H6HN1200V 100A Four-Pack ModuleMay 2015 Preliminary RoHS CompliantPRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin

 8.3. Size:176K  macmic
mmg100hb060b6en.pdf

MG100HF12MIC1
MG100HF12MIC1

MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 8.4. Size:227K  macmic
mmg100hb120h6hn.pdf

MG100HF12MIC1
MG100HF12MIC1

MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin

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