MG200HF12MIC2 Todos los transistores

 

MG200HF12MIC2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG200HF12MIC2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

MG200HF12MIC2 Datasheet (PDF)

 ..1. Size:265K  cn yangzhou yangjie elec
mg200hf12mic2.pdf pdf_icon

MG200HF12MIC2

PRELIMINARY MG200HF12MIC2 RoHS COMPLIANT IGBT Modules VCES 1200V IC 200A Applications Welding Machine Power Supplies Others Circuit Features Short circuit rated 10s Low stray Inductance Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast

 4.1. Size:520K  cn yangzhou yangjie elec
mg200hf12mrc2.pdf pdf_icon

MG200HF12MIC2

RoHS MG200HF12MRC2 COMPLIANT IGBT Modules VCES 1200V IC 200A Applications Industrial Inverters Servo Applications SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10s Low Stray Inductance Low Saturation Voltage Ultra Low loss HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Absolu

 8.1. Size:324K  macmic
mmg200hb060h6en.pdf pdf_icon

MG200HF12MIC2

MMG200HB060H6EN 600V 200A IGBT Module March 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching a

 8.2. Size:224K  macmic
mmg200hb060b6en.pdf pdf_icon

MG200HF12MIC2

MMG200HB060B6EN600V 200A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

Otros transistores... KWRFF40R12SWM , KWRFF50R12SWM , KWRFF75R12SWM , MG100HF12MIC1 , MG100HF12MRC1 , MG100UZ12MRGJ , MG150HF12MIC2 , MG150HF12MRC2 , GT60N321 , MG200HF12MRC2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , MG75U12MRGJ , MSG100T65HLB3 , MSG100T65HLC1 .

History: MMG150SR120B | IXGH30N60B | IRG7PH35UD1M | NGTB50N120FL2WG | IRG4BC30UD | IKW50N65WR5 | MMG15CB120XB6TC

 

 
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