MG200HF12MRC2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG200HF12MRC2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Qgⓘ - Carga total de la puerta, typ: 2100 nC
Paquete / Cubierta: MODULE
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Otros transistores... KWRFF50R12SWM , KWRFF75R12SWM , MG100HF12MIC1 , MG100HF12MRC1 , MG100UZ12MRGJ , MG150HF12MIC2 , MG150HF12MRC2 , MG200HF12MIC2 , IHW20N120R2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , MG75U12MRGJ , MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 .
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