IXGA12N60CD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA12N60CD1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 32 nC
Paquete / Cubierta: TO263
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IXGA12N60CD1 Datasheet (PDF)
ixga12n60cd1 ixgp12n60cd1.pdf
IXGA 12N60CD1HiPerFASTTM IGBTVCES = 600 VIXGP 12N60CD1LightspeedTM Series IC25 = 24 AVCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-263 (IXGA)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-220 ABICM TC = 25C,
ixga12n60c ixgp12n60c.pdf
VCES = 600 VIXGA 12N60CHiPerFASTTM IGBT IC25 = 24 AIXGP 12N60C VCE(sat)= 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-263 AA (IXGA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 V C (tab)EVGEM Transient 30 VIC25 TC = 25C24 ATO-220 ABIC90 TC = 90C12 A(IXGP)ICM TC = 25C, 1 ms 48
ixga12n60b ixgp12n60b.pdf
IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf
VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A
ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf
VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =
ixga12n120a2 ixgp12n120a2.pdf
IXGA 12N120A2VCES = 1200 VIGBTIXGP 12N120A2IC25 = 24 AOptimized forVCE(sat) = 3.0 Vswitching up to 5KHzPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1
Otros transistores... IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IKW40T120 , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2