IXGA12N60CD1 Todos los transistores

 

IXGA12N60CD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA12N60CD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 55

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de IXGA12N60CD1 - IGBT

 

IXGA12N60CD1 Datasheet (PDF)

3.1. ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf Size:51K _ixys

IXGA12N60CD1
IXGA12N60CD1

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

3.2. ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf Size:116K _ixys

IXGA12N60CD1
IXGA12N60CD1

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

 3.3. ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf Size:201K _ixys

IXGA12N60CD1
IXGA12N60CD1

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V G

3.4. ixga12n120a2 ixgp12n120a2.pdf Size:578K _ixys

IXGA12N60CD1
IXGA12N60CD1

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1

Otros transistores... IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IRG4BC40U , IXGA15N100C , IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 .

 

 
Back to Top

 


IXGA12N60CD1
  IXGA12N60CD1
  IXGA12N60CD1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: FMG2G400US60 | NGD8201AN | MSG50N350FH | GT15Q102 | PSTG75HST12 | PSTG50HST12 | PSTG25HTT12 | PSTG25HDT12 | PS21265-P | PS21265-AP |

 

 

 
Back to Top