MG75HF12MRC1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG75HF12MRC1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 105 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Qgⓘ - Carga total de la puerta, typ: 780 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MG75HF12MRC1 - IGBT
MG75HF12MRC1 Datasheet (PDF)
mg75hf12mrc1.pdf
RoHS MG75HF12MRC1 COMPLIANT IGBT Modules VCES 1200V IC 75A Applications Industrial Inverters Servo Applications SMPS UPS Induction Heating Welder Circuit Features Short Circuit Rated 10s Low Stray Inductance Low Saturation Voltage Ultra Low loss HI-REL Power Terminals Lead Free, Compliant With RoHS Requireme
mg75hf12mic1.pdf
PRELIMINARY MG75HF12MIC1 RoHS COMPLIANT IGBT Modules VCES 1200V IC 75A Applications High frequency switching application Medical applications Motion/servo control UPS systems Circuit Features High short circuit capability, self limiting short circuit current IGBT CHIP (Trench+Field Stop technology) VCE(sat) with positive temperature coeffi
mmg75h060xb6en.pdf
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mmg75hb120h6un.pdf
MMG75HB120H6UN 1200V 75A Four-Pack Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP
mmg75hb060h6en.pdf
MMG75HB060H6EN600V 75A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg75h120x6tc.pdf
MMG75H120X6TC1200V 75A Six-Pack ModuleMay 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg75h120x6tn.pdf
MMG75H120X6TN1200V 75A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated
mmg75hb120h6hn.pdf
MMG75HB120H6HN1200V 75A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching
mmg75hb060b6en.pdf
MMG75HB060B6EN600V 75A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg75h120h6hn.pdf
MMG75H120H6HN1200V 75A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching l
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