IXGA15N100C Todos los transistores

 

IXGA15N100C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGA15N100C

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 115

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO263

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IXGA15N100C Datasheet (PDF)

2.1. ixga15n120b ixgp15n120b.pdf Size:51K _ixys

IXGA15N100C
IXGA15N100C

IXGA 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGP 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C30 A IC90 TC = 90°C15 A ICM TC = 25°C, 1 ms 60 A TO-263 AA

5.1. ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf Size:51K _ixys

IXGA15N100C
IXGA15N100C

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

5.2. ixga16n60c2d1.pdf Size:216K _ixys

IXGA15N100C
IXGA15N100C

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C

 5.3. ixga16n60b2d1.pdf Size:214K _ixys

IXGA15N100C
IXGA15N100C

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 2.3V ≤ ≤ IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C (

5.4. ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf Size:116K _ixys

IXGA15N100C
IXGA15N100C

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

 5.5. ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf Size:56K _ixys

IXGA15N100C
IXGA15N100C

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

5.6. ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf Size:201K _ixys

IXGA15N100C
IXGA15N100C

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V G

5.7. ixga12n120a2 ixgp12n120a2.pdf Size:578K _ixys

IXGA15N100C
IXGA15N100C

IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V TO-220AB (IXGP) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1

5.8. ixga16n60c2.pdf Size:197K _ixys

IXGA15N100C
IXGA15N100C

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2 C2-Class IC110 = 16A IXGP16N60C2 ≤ High Speed VCE(sat) ≤ ≤ 3.0V ≤ ≤ tfi(typ) = 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110

5.9. ixga16n60b2.pdf Size:221K _ixys

IXGA15N100C
IXGA15N100C

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 ≤ VCE(sat) ≤ ≤ 2.3V ≤ ≤ tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110°

Otros transistores... IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IXGA12N60CD1 , G20N60B3 , IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGD10N100 .

 

 
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