IXGA15N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGA15N120B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 95 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IXGA15N120B IGBT
Principales características: IXGA15N120B
ixga15n120b ixgp15n120b.pdf
IXGA 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGP 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA
ixga15n120b2 ixgp15n120b2.pdf
VCES =1200 V IXGA 15N120B2 HiPerFASTTM IGBT IC25 = 30 A IXGP 15N120B2 VCE(sat) = 3.5 V Optimized for 10-25 KHz hard tfi(typ) = 137 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 2
ixga15n120c ixgp15n120c.pdf
VCES =1200 V IXGA 15N120C IGBT IC25 = 30 A IXGP 15N120C VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)
ixga15n100c ixgp15n100c.pdf
VCES =1000 V IXGA 15N100C IGBT IC25 = 30 A IXGP 15N100C VCE(sat) = 3.5 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)
Otros transistores... IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C , IXGA12N60CD1 , IXGA15N100C , TGD30N40P , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGH32N60AU1S , IXGH40N30AS .
History: IXGA20N60B
History: IXGA20N60B
Liste
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