MSG75T120FQC1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG75T120FQC1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 882 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 115 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 470 nS
Coesⓘ - Capacitancia de salida, typ: 312 pF
Qgⓘ - Carga total de la puerta, typ: 270 nC
Paquete / Cubierta: TO247PLUS
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MSG75T120FQC1 Datasheet (PDF)
msg75t120fqc1 msg75t120fqw.pdf
MSG75T120FQW/C1Features V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t120fqw.pdf
MSG75T120FQWFeatures V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25
msg75t65fqc.pdf
MSG75T65FQCN-Channel IGBTFeatures Low gate charge FS Technology Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65FQC MSG75T65FQC TO-247Absolute Ratings(Tc=25)ValueParameter Symbol UnitMSG75T65FQCCollector
msg75t65hhc0.pdf
MSG75T65HHC0N-Channel IGBTFeatures Low gate charge Short circuit withstand time 10 uS Saturation voltage:VCE(sat),typ=1.7VApplications General purpose inverter Induction heating(IH) UPSOrder MessageOrder codes Marking PackageMSG75T65HHC0 MSG75T65HHC0 TO-247Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 650 Vce
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2