SPT40N120T1B1 Todos los transistores

SPT40N120T1B1T8TL 1200V /40A TrenchField Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

SPT40N120T1BT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

SPT40N120F1CT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

SPT40N120F1A1 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to p

SPTECH Product Specification SPT40N120 SPL40N12 1200V 40A High Speed IGBT FEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diode G G C APPLICATIONS C E TO-247 E TO-264 Welding converters Uninterruptible Power Supply C General purpose inverters Ordering Information

SPT40N120F1A 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

SPTECH Product Specification SPT40N120F1C FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to positive