SPT15N120F1T8TL Todos los transistores

 

SPT15N120F1T8TL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT15N120F1T8TL

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO247

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SPT15N120F1T8TL datasheet

 0.1. Size:3565K  cn sps
spt15n120f1t8tl.pdf pdf_icon

SPT15N120F1T8TL

SPT15N120F1T8TL 1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High ruggednes

 3.1. Size:1266K  cn sptech
spt15n120f1.pdf pdf_icon

SPT15N120F1T8TL

SPT15N120F1 1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High ruggedness, t

 5.1. Size:9545K  cn sps
spt15n120t1t8tl.pdf pdf_icon

SPT15N120F1T8TL

SPT15N120T1T8TL 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature s

 5.2. Size:1120K  cn sptech
spt15n120t1.pdf pdf_icon

SPT15N120F1T8TL

SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stab

Otros transistores... SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SGT60U65FD1PT , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL .

History: SHD724602 | STGW75H65DFB2-4

 

 

 


History: SHD724602 | STGW75H65DFB2-4

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