YGW25N120T1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

YGW25N120T1 datasheet

..1. Size:563K cn luxin semi
ygw25n120t1.pdf pdf_icon

YGW25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parall

5.1. Size:481K cn luxin semi
ygw25n120f1a1.pdf pdf_icon

YGW25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat

5.2. Size:428K cn luxin semi
ygw25n120u2.pdf pdf_icon

YGW25N120U2 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability du

7.1. Size:602K cn luxin semi
ygw25n135f1a.pdf pdf_icon

YGW25N135F1A 1350V /25A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-S

Otros transistores... YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , IHW20N135R5 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP .