YGW40N120T2 Todos los transistores

 ..1. Size:527K  cn luxin semi
 ygw40n120t2.pdf

YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution Short circuit withstand time 10 s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin

 4.1. Size:502K  cn luxin semi
 ygw40n120t3.pdf

YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parall

 5.1. Size:466K  cn luxin semi
 ygw40n120f2.pdf

YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

 8.1. Size:599K  1
 ygw40n65f1.pdf

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 8.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 8.3. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 8.4. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in