YGW50N65F1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

YGW50N65F1A Datasheet (PDF)

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YGW50N65F1A 650V /50A Trench Field Stop IGBT FEATURES V CE 650 V High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability du

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YGW50N65T1 650V /50A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

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ygw50n120fp.pdf pdf_icon

YGW50N120FP 1200V /50A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 50 A Cimproved reliability V I =50A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 8s Low V CEsat Easy parallel switching capability du

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .