YGW50N65F1A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YGW50N65F1A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 312 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 22 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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YGW50N65F1A datasheet

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 ygw50n65f1a.pdf pdf_icon

YGW50N65F1A

YGW50N65F1A 650V /50A Trench Field Stop IGBT FEATURES V CE 650 V High breakdown voltage up to 650V for I 50 A C improved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability du

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YGW50N65F1A

YGW50N65T1 650V /50A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 50 A C improved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 5 s Low V CEsat Easy parallel switching capability due

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 ygw50n120fp.pdf pdf_icon

YGW50N65F1A

YGW50N120FP 1200V /50A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 50 A C improved reliability V I =50A 1.65 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 8 s Low V CEsat Easy parallel switching capability du

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