YGW50N65F1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

YGW50N65F1A Datasheet (PDF)

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YGW50N65F1A 650V /50A Trench Field Stop IGBT FEATURES V CE 650 V High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability du

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YGW50N65T1 650V /50A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 50 A Cimproved reliability V I =50A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 5s Low V CEsat Easy parallel switching capability due

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YGW50N120FP 1200V /50A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 50 A Cimproved reliability V I =50A 1.65 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 8s Low V CEsat Easy parallel switching capability du

Otros transistores... YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 , YGW50N120FP , IKW50N60T , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP , YGW75N65T1 , NCE07T60BI .