NCE30TD60BP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE30TD60BP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 183 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 106 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
NCE30TD60BP Datasheet (PDF)
nce30td60bp.pdf

Pb Free ProductNCE30TD60BP600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce30td60bp nce30td60bt.pdf

PbFreeProduct NCE30TD60BP,NCE30TD60BT 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
nce30td60bd.pdf

PbFreeProduct NCE30TD60BD 600V, 30A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed
nce30td60b.pdf

Pb Free ProductNCE30TD60B600V, 30A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FS II IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRGIB10B60KD1P | IXYT30N65C3H1HV | SKM100GAL12T4 | APT26GU30B | 6MBI100VX-120-50 | SKM150GAR123D | IXXH110N65C4
History: IRGIB10B60KD1P | IXYT30N65C3H1HV | SKM100GAL12T4 | APT26GU30B | 6MBI100VX-120-50 | SKM150GAR123D | IXXH110N65C4



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