IXGH10N100AU1 Todos los transistores

 

IXGH10N100AU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH10N100AU1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 500

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH10N100AU1 Datasheet (PDF)

1.1. ixgh10n100a.pdf Size:34K _ixys

IXGH10N100AU1
IXGH10N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C20 A G = Gate, C = Collector, IC90 TC = 90°C10 A E = Emitter, TAB = Col

1.2. ixgh10n100.pdf Size:34K _ixys

IXGH10N100AU1
IXGH10N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 V High speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C20 A G = Gate, C = Collector, IC90 TC = 90°C10 A E = Emitter, TAB = Col

 2.1. ixgh10n170a ixgt10n170a.pdf Size:565K _ixys

IXGH10N100AU1
IXGH10N100AU1

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C10 A TO-247 AD (IXGH) IC90 TC = 90°C5 A ICM

2.2. ixgh10n170a.pdf Size:562K _ixys

IXGH10N100AU1
IXGH10N100AU1

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C10 A TO-247 AD (IXGH) IC90 TC = 90°C5 A ICM

 2.3. ixgh10n170.pdf Size:187K _ixys

IXGH10N100AU1
IXGH10N100AU1

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 ≤ VCE(sat) ≤ ≤ 4.0V ≤ ≤ TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 1700 V C C (TAB) E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V TO-268 (IXGT) VGEM Transient ± 30 V IC25 TC = 25°C 20 A G E IC90 TC = 90°C 10 A C (TAB) ICM TC = 25°C,

Otros transistores... IXGD10N60A , IXGD17N100 , IXGD20N60A , IXGD25N100 , IXGD25N120 , IXGD60N60 , IXGH10N100 , IXGH10N100A , GT30J301 , IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 .

 

 
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