NCE40TD120VT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE40TD120VT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 468 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 177 pF
Encapsulados: TO247
Búsqueda de reemplazo de NCE40TD120VT IGBT
- Selección ⓘ de transistores por parámetros
NCE40TD120VT datasheet
nce40td120vt.pdf
PbFreeProduct NCE40TD120VT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce40td120vtp.pdf
PbFreeProduct NCE40TD120VTP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
nce40td120ww.pdf
Pb Free Product NCE40TD120WW 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce40td120bt.pdf
PbFreeProduct NCE40TD120BT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
Otros transistores... NCE30TD120UT , NCE30TD60B , NCE30TD60BF , NCE30TD60BD , NCE30TD60BP , NCE30TD60BT , NCE30TH60BP , NCE40TD120BT , TGD30N40P , NCE40TD120VTP , NCE40TD120WT , NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP .
History: STGB5H60DF | SME6G50US60 | SME6G25US120 | BG150B12UY3-I | JT05N065CED | JT075N065GHED
History: STGB5H60DF | SME6G50US60 | SME6G25US120 | BG150B12UY3-I | JT05N065CED | JT075N065GHED
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