IXGH12N100 Todos los transistores

 

IXGH12N100 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH12N100
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: TO247
 

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Principales características: IXGH12N100

 ..1. Size:34K  ixys
 ixgh12n100.pdf pdf_icon

IXGH12N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C24 A G = Gate C = Collector IC90 TC = 90 C12 A E = Emitter TAB =

 ..2. Size:35K  ixys
 ixgh12n100 ixgh12n100a.pdf pdf_icon

IXGH12N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C24 A G = Gate C = Collector IC90 TC = 90 C12 A E = Emitter TAB =

 0.1. Size:119K  ixys
 ixgh12n100u1.pdf pdf_icon

IXGH12N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM

 0.2. Size:119K  ixys
 ixgh12n100au1.pdf pdf_icon

IXGH12N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM

MOSTRAR MÁS

Otros transistores... IXGH50N60AS , IXGT32N60B , IXSM25N100 , IXSM25N100A , IXGH10N100U1 , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 , FGPF4533 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , IXGH12N90C .

History: IXGH40N30AS

 

 
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