NCE60TD60BT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60TD60BT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 316 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 199 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de NCE60TD60BT IGBT
NCE60TD60BT PDF specs
nce60td60bt.pdf
Pb Free Product NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce60td60bp nce60td60bt.pdf
PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒
nce60td60bp.pdf
Pb Free Product NCE60TD60BP 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce60td65bt.pdf
PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
Otros transistores... NCE40TD120VTP , NCE40TD120WT , NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP , TGAN40N60FD , NCE75TD120VTP , NCE75TS120VTP , NCE80TD60BP , NCE80TD60BT , STGB10M65DF2 , STGB10NC60KDT4 , STGD10NC60KDT4 , STGB14NC60KDT4 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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