NCE75TD120VTP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE75TD120VTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 833 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 327 pF
Encapsulados: TO247P
Búsqueda de reemplazo de NCE75TD120VTP IGBT
- Selección ⓘ de transistores por parámetros
NCE75TD120VTP datasheet
nce75td120vtp.pdf
PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s
nce75td120vt.pdf
PbFreeProduct NCE75TD120VT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce75td120wt.pdf
Pb Free Product NCE75TD120WT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce75td120btp4.pdf
Pb Free Product NCE75TD120BTP4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
Otros transistores... NCE40TD120WT , NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP , NCE60TD60BT , FGW75N60HD , NCE75TS120VTP , NCE80TD60BP , NCE80TD60BT , STGB10M65DF2 , STGB10NC60KDT4 , STGD10NC60KDT4 , STGB14NC60KDT4 , STGB15M65DF2 .
History: STGB3NB60SD | STGW20NB60HD | STGF30M65DF2
History: STGB3NB60SD | STGW20NB60HD | STGF30M65DF2
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor









