STGP30H60DFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGP30H60DFB
Tipo de transistor: IGBT + Diode
Código de marcado: GP30H60DFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 14.6 nS
Coesⓘ - Capacitancia de salida, typ: 101 pF
Qgⓘ - Carga total de la puerta, typ: 149 nC
Paquete / Cubierta: TO220
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STGP30H60DFB Datasheet (PDF)
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