STGB3HF60HD Todos los transistores

 

STGB3HF60HD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB3HF60HD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 38 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 7.5 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 4 nS
   Coesⓘ - Capacitancia de salida, typ: 14 pF
   Paquete / Cubierta: D2PAK
 

 Búsqueda de reemplazo de STGB3HF60HD IGBT

   - Selección ⓘ de transistores por parámetros

 

STGB3HF60HD PDF specs

 ..1. Size:1321K  st
stgb3hf60hd stgd3hf60hdt4 stgf3hf60hd stgp3hf60hd.pdf pdf_icon

STGB3HF60HD

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I... See More ⇒

 9.1. Size:741K  st
stgb35n35lz.pdf pdf_icon

STGB3HF60HD

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES... See More ⇒

 9.2. Size:386K  st
stgb30nc60k.pdf pdf_icon

STGB3HF60HD

STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 2 Applications 1 1 D PAK TO-220 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH process resulting in an ... See More ⇒

 9.3. Size:741K  st
stgb35n35lz stgp35n35lz.pdf pdf_icon

STGB3HF60HD

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES... See More ⇒

Otros transistores... STGB14NC60KDT4 , STGB15M65DF2 , STGB19NC60HDT4 , STGB19NC60KDT4 , STGB20H65DFB2 , STGB20M65DF2 , STGB30H60DFB , STGP30H60DFB , FGH60N60SMD , STGD3HF60HDT4 , STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF .

History: BSM35GB120DN2

 

 
Back to Top

 


 
.