STGD3HF60HDT4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGD3HF60HDT4
Tipo de transistor: IGBT + Diode
Código de marcado: GD3HF60HD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 38
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 7.5
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.45
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.75
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 4
Capacitancia de salida (Cc), typ, pF: 14
Carga total de la puerta (Qg), typ, nC: 12
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de STGD3HF60HDT4 - IGBT
STGD3HF60HDT4 Datasheet (PDF)
stgb3hf60hd stgd3hf60hdt4 stgf3hf60hd stgp3hf60hd.pdf
STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I
stgd3hf60hd.pdf
STGD3HF60HD4.5 A, 600 V very fast IGBT with Ultrafast diodeFeatures Minimal tail current Low conduction and switching lossesTAB Ultrafast soft recovery antiparallel diode3Applications1Motor driveDPAKDescriptionThe STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus tempera
stgd3nb60sd.pdf
STGD3NB60SDN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGD3NB60SD 600 V
stgd3nb60h.pdf
STGD3NB60HN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTD3NB60H 600 V
stgd3nc120h.pdf
STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state
stgp3nb60s-stgd3nb60s.pdf
STGP3NB60SSTGD3NB60SN-CHANNEL 3A - 600V - TO-220 / DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60S 600 V
Otros transistores... STGB15M65DF2 , STGB19NC60HDT4 , STGB19NC60KDT4 , STGB20H65DFB2 , STGB20M65DF2 , STGB30H60DFB , STGP30H60DFB , STGB3HF60HD , FGPF4536 , STGF3HF60HD , STGP3HF60HD , STGB40H65FB , STGB5H60DF , STGD5H60DF , STGF5H60DF , STGP5H60DF , STGB6NC60HDT4 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ