IXGH12N100AU1 Todos los transistores

 

IXGH12N100AU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH12N100AU1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1000

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 500

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH12N100AU1 Datasheet (PDF)

1.1. ixgh12n100a.pdf Size:34K _ixys

IXGH12N100AU1
IXGH12N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.2. ixgh12n100u1.pdf Size:119K _ixys

IXGH12N100AU1
IXGH12N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

 1.3. ixgh12n100 ixgh12n100a.pdf Size:35K _ixys

IXGH12N100AU1
IXGH12N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.4. ixgh12n100au1.pdf Size:119K _ixys

IXGH12N100AU1
IXGH12N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

 1.5. ixgh12n100.pdf Size:34K _ixys

IXGH12N100AU1
IXGH12N100AU1

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

Otros transistores... IXGD25N100 , IXGD25N120 , IXGD60N60 , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 , IXGH12N100 , IXGH12N100A , CT60AM-18F , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 .

 

 
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