STGWA20H65DFB2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA20H65DFB2
Tipo de transistor: IGBT + Diode
Código de marcado: G20H65DFB2
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 147 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 8 nS
Coesⓘ - Capacitancia de salida, typ: 81 pF
Qgⓘ - Carga total de la puerta, typ: 56 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de STGWA20H65DFB2 - IGBT
STGWA20H65DFB2 Datasheet (PDF)
stgwa20h65dfb2.pdf
STGWA20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te
stgwa20hp65fb2.pdf
STGWA20HP65FB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic
stgwa20m65df2.pdf
STGWA20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diodeC (2)Applications Motor control UPS PFCG (1) General-purp
stgwa20ih65df.pdf
STGWA20IH65DFDatasheetTrench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft-commutation Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2