STGWA30IH65DF Todos los transistores

 

STGWA30IH65DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA30IH65DF
   Tipo de transistor: IGBT + Diode
   Código de marcado: G30IH65DF
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 180
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 60
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.55
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7
   Temperatura máxima de unión (Tj), ℃: 175
   Capacitancia de salida (Cc), typ, pF: 82
   Carga total de la puerta (Qg), typ, nC: 80
   Paquete / Cubierta: TO247

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STGWA30IH65DF Datasheet (PDF)

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stgwa30ih65df.pdf

STGWA30IH65DF STGWA30IH65DF

STGWA30IH65DFDatasheetTrench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO247 long leads packageFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa

 7.1. Size:419K  st
stgwa30n120kd.pdf

STGWA30IH65DF STGWA30IH65DF

STGW30N120KDSTGWA30N120KD30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

 7.2. Size:698K  st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGWA30IH65DF STGWA30IH65DF

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

 7.3. Size:562K  st
stgw30m65df2 stgwa30m65df2.pdf

STGWA30IH65DF STGWA30IH65DF

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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