STGWA40HP65FB2 Todos los transistores

 

STGWA40HP65FB2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA40HP65FB2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 230 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

Coesⓘ - Capacitancia de salida, typ: 122 pF

Encapsulados: TO247

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STGWA40HP65FB2 datasheet

 ..1. Size:512K  st
stgwa40hp65fb2.pdf pdf_icon

STGWA40HP65FB2

STGWA40HP65FB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

 6.1. Size:526K  st
stgwa40h65dfb.pdf pdf_icon

STGWA40HP65FB2

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 6.2. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGWA40HP65FB2

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio

 6.3. Size:699K  st
stgwa40h120df2.pdf pdf_icon

STGWA40HP65FB2

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 TO

Otros transistores... STGWA100H65DFB2 , STGWA20H65DFB2 , STGWA20HP65FB2 , STGWA20IH65DF , STGWA20M65DF2 , STGWA30IH65DF , STGWA40H65DFB , STGWA40H65DFB2 , NGD8201N , STGWA50HP65FB2 , STGWA50M65DF2 , STGWA75H65DFB2 , STGWT30HP65FB , STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN .

History: TA49052 | YGW40N65F1A1 | SRE60N065FSU

 

 

 


History: TA49052 | YGW40N65F1A1 | SRE60N065FSU

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