STGWA50M65DF2 Todos los transistores

STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.65 V (typ.) @ I = 50 A CE(sat) C Tight parameters distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft

STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 TO

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long le

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

STGWA19NC60HD 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Applications 3 2 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-247 resonant topologies Description This device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Tight parameters distribution

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low

STGWA20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode C (2) Applications Motor control UPS PFC G (1) General-purp

STGW25M120DF3 STGWA25M120DF3 Trench gate field-stop IGBT, M series 1200 V, 25 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T

STGWA20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) te

STGWA30IH65DF Datasheet Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft commutation only Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 30 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-pa

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A 3 3 2 2 1 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistan

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGW15H120F2, STGWA15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Safe paralleling TO-247 TO-2

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGWA60NC60WDR 60 A, 600 V, ultrafast IGBT Features Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode 3 2 Applications 1 Welding TO-247 long leads Power factor correction SMPS High frequency inverter/converter Figure 1. Internal schematic diagram Description This

STGWA20HP65FB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coeffic

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode 3 1 3 2 1 D PAK Applications TO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-220FP TO-247 This IGBT utilize

STGW15S120DF3, STGWA15S120DF3 Trench gate field-stop IGBT, S series 1200 V, 15 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling 3 Low thermal resistance 2 1 Soft and fast recovery antiparallel diode TO-247 TO-247 long leads Applicat

STGWA75H65DFB2 Datasheet Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling

STGWA20IH65DF Datasheet Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO 247 long leads package Features Designed for soft-commutation Maximum junction temperature TJ = 175 C VCE(sat) = 1.55 V (typ.) @ IC = 20 A Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-package

STGWA40HP65FB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficien

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 3 2 2 1 1 VCE(sat) = 1.6 V (typ.) @ IC = 80 A Max247 TO-247 Tight parameter distribution TAB Safe par

STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para

STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance 3 2 Soft and fast recovery antiparallel diode 1 TO-247 Applications TO-247 long l

STGWA40H65DFB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temp

STGWA100H65DFB2 Datasheet Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO 247 long leads package Features Maximum junction temperature TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution TO-247 long leads Low thermal resistance

STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery

STGW15H120DF2, STGWA15H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 VCE(sat) = 2.1 V @ IC = 15 A 2 3 1 2 1 5 s minimum short circuit withstand time at TJ = 150 C TO-247 TO-247 long leads Safe paralleling Low the