IXGH12N60C IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXGH12N60C datasheet

..1. Size:54K ixys
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IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C24 A C E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collecto

0.1. Size:59K ixys
ixgh12n60cd1.pdf pdf_icon

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Co

5.1. Size:34K ixys
ixgh12n60bd1.pdf pdf_icon

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collect

5.2. Size:33K ixys
ixgh12n60b.pdf pdf_icon

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collector,

Otros transistores... IXGH10N100A , IXGH10N100AU1 , IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , GT30J124 , IXGH12N60CD1 , IXGH12N90C , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A .