AFGHL50T65SQD Todos los transistores

 

AFGHL50T65SQD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFGHL50T65SQD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 268 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 85 pF
   Paquete / Cubierta: TO247

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AFGHL50T65SQD Datasheet (PDF)

 ..1. Size:334K  onsemi
afghl50t65sqd.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified50 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

 0.1. Size:340K  onsemi
afghl50t65sqdc.pdf

AFGHL50T65SQD
AFGHL50T65SQD

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 VUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology,AFGHL50T65SQDC offers the optimum performance with both lowconduction and switching losses for high efficiency operations invarious applications, especially totem pole bridgeless PFC and www.onsemi.comInverter.Features50 A, 650 V

 2.1. Size:238K  onsemi
afghl50t65sq.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT50 A, 650 VAFGHL50T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL50T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified50 A, 650 V Maximum Junction Temperature: TJ = 175

 9.1. Size:410K  onsemi
afghl75t65sqdc.pdf

AFGHL50T65SQD
AFGHL50T65SQD

IGBT Hybrid, Field Stop,Trench650 V, 75 A, TO247AFGHL75T65SQDCUsing the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andwww.onsemi.comswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and

 9.2. Size:346K  onsemi
afghl40t65sqd.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQDUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQD which is AEC Q101 qualified offersthe optimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application.Features AEC-Q101 Qualified40 A, 650 V, Maximum Junction Temperature: TJ = 175CVCESat = 1.6 V

 9.3. Size:331K  onsemi
afghl40t65sq.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SQUsing the novel field stop 4th generation high speed IGBTtechnology. AFGHL40T65SQ which is AEC Q101 qualified offers theoptimum performance for both hard and soft switching topology inwww.onsemi.comautomotive application. It is a stand-alone IGBT.Features AEC-Q101 Qualified40 A, 650 V Maximum Junction Temperature: TJ = 175

 9.4. Size:400K  onsemi
afghl40t65spd.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT40 A, 650 VAFGHL40T65SPDDescriptionUsing the novel field stop 3rd generation IGBT technology,AFGHL40T65SPD offers the optimum performance with both lowwww.onsemi.comconduction loss and switching loss for a high efficiency operation invarious applications, which provides 50 V higher blocking voltageVCES Eon VCE(Sat)and rugged high current switching relia

 9.5. Size:255K  onsemi
afghl75t65sqdt.pdf

AFGHL50T65SQD
AFGHL50T65SQD

Field Stop Trench IGBT650 V, 75 AAFGHL75T65SQDTUsing the novel field stop 4th generation IGBT technology and theStealth Diode technology, AFGHL75T65SQDT offers the optimumperformance with both low conduction and switching losses for a highwww.onsemi.comefficiency operation in various applications, especially totem polebridgeless PFC and DCDC block as well.75 A, 650 V Feature

 9.6. Size:298K  onsemi
afghl75t65sq.pdf

AFGHL50T65SQD
AFGHL50T65SQD

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Otros transistores... STGYA120M65DF2AG , STGYA75H120DF2 , AFGB30T65SQDN , AFGB40T65SQDN , AFGHL40T65SPD , AFGHL40T65SQ , AFGHL40T65SQD , AFGHL50T65SQ , IRGP4066D , AFGHL50T65SQDC , AFGHL75T65SQ , AFGHL75T65SQDC , AFGHL75T65SQDT , AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 .

 

 
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