AFGHL50T65SQDC Todos los transistores

 ..1. Size:340K  onsemi
 afghl50t65sqdc.pdf

AFGHL50T65SQDC Hybrid IGBT 50 A, 650 V Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and www.onsemi.com Inverter. Features 50 A, 650 V

 1.1. Size:334K  onsemi
 afghl50t65sqd.pdf

 2.1. Size:238K  onsemi
 afghl50t65sq.pdf

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 50 A, 650 V Maximum Junction Temperature TJ = 175

 9.1. Size:410K  onsemi
 afghl75t65sqdc.pdf

IGBT Hybrid, Field Stop, Trench 650 V, 75 A, TO247 AFGHL75T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and www.onsemi.com switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and

 9.2. Size:346K  onsemi
 afghl40t65sqd.pdf

 9.3. Size:331K  onsemi
 afghl40t65sq.pdf

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a stand-alone IGBT. Features AEC-Q101 Qualified 40 A, 650 V Maximum Junction Temperature TJ = 175

 9.4. Size:400K  onsemi
 afghl40t65spd.pdf

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SPD Description Using the novel field stop 3rd generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage VCES Eon VCE(Sat) and rugged high current switching relia

 9.5. Size:255K  onsemi
 afghl75t65sqdt.pdf

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high www.onsemi.com efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. 75 A, 650 V Feature

 9.6. Size:298K  onsemi
 afghl75t65sq.pdf

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