AFGY120T65SPD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFGY120T65SPD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 714
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 160
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 104
Capacitancia de salida (Cc), typ, pF: 375
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AFGY120T65SPD - IGBT
AFGY120T65SPD Datasheet (PDF)
afgy120t65spd.pdf
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Field Stop Trench IGBT withSoft Fast Recovery Diode120 A, 650 VAFGY120T65SPDAFGY120T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
afgy120t65spd-b4.pdf
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Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 120 Awww.onsemi.comAFGY120T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped
afgy160t65spd-b4.pdf
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Field Stop Trench IGBTWith Soft Fast RecoveryDiode and VCESAT, VTHBinning650 V, 160 Awww.onsemi.comAFGY160T65SPD-B4Features AEC-Q101 Qualified and PPAP CapableC Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-EfficientG Tight Parameter Distribution High Input Imped
afgy100t65spd.pdf
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Field Stop Trench IGBT withSoft Fast Recovery Diode100 A, 650 VAFGY100T65SPDAFGY100T65SPD which is AEC Q101 qualified offers very lowconduction and switch losses for a high efficiency operation in variouswww.onsemi.comapplications, rugged transient reliability and low EMI.Meanwhile, this part also offers an advantage of outstanding paralleloperation performance with balance cu
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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