FGA15N120ANTDTU - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA15N120ANTDTU
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 186
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 30
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
Tensión máxima de puerta-umbral |VGE(th)|, V: 8.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 20
Capacitancia de salida (Cc), typ, pF: 143
Carga total de la puerta (Qg), typ, nC: 120
Paquete / Cubierta: TO3P
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FGA15N120ANTDTU Datasheet (PDF)
fga15n120antdtu f109.pdf
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May 2006FGA15N120ANTD / FGA15N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1
fga15n120antdtu.pdf
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FGA15N120ANTDTU1200 V, 15 A NPT Trench IGBTDescriptionUsing ON Semiconductor's proprietary trench design and Featuresadvanced NPT technology, the 1200V NPT IGBT offers NPT Trench Technology, Positive temperature coefficient superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. Low Saturation Voltage: VCE(sat), typ = 1.9 V
fga15n120ftd.pdf
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January 2008FGA15N120FTDtm1200V, 15A Field Stop Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.58V @ IC = 15Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel o
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ