FGA30S120P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA30S120P
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 348
Tensión máxima colector-emisor |Vce|, V: 1300
Tensión máxima puerta-emisor |Vge|, V: 25
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 360
Capacitancia de salida (Cc), typ, pF: 75
Carga total de la puerta (Qg), typ, nC: 78
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de FGA30S120P - IGBT
FGA30S120P Datasheet (PDF)
fga30s120p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga30n120ftd.pdf
May 2009FGA30N120FTDtm1200V, 30A Trench IGBTFeatures General Description Field stop trench technology Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- High speed switchingmances, and easy parallel operation with exceptional avalanche Low saturation voltage: VCE(sat) = 1.6V @ IC = 30Aruggedne
fga30n60lsd.pdf
October 2008FGA30N60LSDtmFeatures General Description Low saturation voltage: VCE(sat) =1.1V @ IC = 30A The FGA30N60LSD is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolar High Input Impedancetransistors.This device has the high input impedance of a Low Conduction LossMOSFET and the low on-state conduction loss of a bipolar
fga3060adf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga30n60lsd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga30t65shd.pdf
December 2014FGA30T65SHD650 V, 30 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchilds new series of field stop 3rd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, telecom, ESS and PFC app
Otros transistores... AFGY100T65SPD , AFGY120T65SPD , AFGY120T65SPD-B4 , AFGY160T65SPD-B4 , FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , IXGH60N60C2 , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , FGA40T65SHDF , FGA40T65UQDF , FGA5065ADF , FGA50S110P , FGA6530WDF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ