FGA30S120P Todos los transistores

 ..1. Size:375K  onsemi
 fga30s120p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:609K  fairchild semi
 fga30n120ftd.pdf

May 2009 FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description Field stop trench technology Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- High speed switching mances, and easy parallel operation with exceptional avalanche Low saturation voltage VCE(sat) = 1.6V @ IC = 30A ruggedne

 9.2. Size:768K  fairchild semi
 fga30n60lsd.pdf

October 2008 FGA30N60LSD tm Features General Description Low saturation voltage VCE(sat) =1.1V @ IC = 30A The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar High Input Impedance transistors.This device has the high input impedance of a Low Conduction Loss MOSFET and the low on-state conduction loss of a bipolar

 9.3. Size:1209K  onsemi
 fga3060adf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:375K  onsemi
 fga30n60lsd.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:709K  onsemi
 fga30t65shd.pdf

December 2014 FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ =175oC Using novel field stop IGBT technology, Fairchild s new series of field stop 3rd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, telecom, ESS and PFC app