IXGH12N90C Todos los transistores

 

IXGH12N90C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH12N90C

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 900

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 24

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 70

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH12N90C Datasheet (PDF)

1.1. ixgh12n90c.pdf Size:141K _igbt

IXGH12N90C
IXGH12N90C

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A PLUS 247 (IXGX) ICM TC = 25°

3.1. ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf Size:201K _ixys

IXGH12N90C
IXGH12N90C

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ? ? VCE(sat) ? 3.0V ? ? IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C, RGE = 1M? 1200 V VGES Continuous 20 V G VGEM Transient 3

3.2. ixgh12n100 ixgh12n100a.pdf Size:35K _ixys

IXGH12N90C
IXGH12N90C

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector

 3.3. ixgh12n60b.pdf Size:33K _igbt

IXGH12N90C
IXGH12N90C

HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collector,

3.4. ixgh12n120a3.pdf Size:199K _igbt

IXGH12N90C
IXGH12N90C

GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 ≤ ≤ VCE(sat) ≤ 3.0V ≤ ≤ IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V G

 3.5. ixgh12n100a.pdf Size:34K _igbt

IXGH12N90C
IXGH12N90C

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

3.6. ixgh12n100u1.pdf Size:119K _igbt

IXGH12N90C
IXGH12N90C

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

3.7. ixgh12n60bd1.pdf Size:34K _igbt

IXGH12N90C
IXGH12N90C

IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collect

3.8. ixgh12n60c.pdf Size:54K _igbt

IXGH12N90C
IXGH12N90C

IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C24 A C E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collecto

3.9. ixgh12n100au1.pdf Size:119K _igbt

IXGH12N90C
IXGH12N90C

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

3.10. ixgh12n60cd1.pdf Size:59K _igbt

IXGH12N90C
IXGH12N90C

HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Co

3.11. ixgh12n100.pdf Size:34K _igbt

IXGH12N90C
IXGH12N90C

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

Otros transistores... IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , G7N60C3D , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 .

 

 
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