IXGH12N90C Todos los transistores

 

IXGH12N90C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH12N90C
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH12N90C Datasheet (PDF)

 ..1. Size:141K  ixys
 ixgh12n90c.pdf pdf_icon

IXGH12N90C

HiPerFASTTM IGBTIXGH 12N90C VCES = 900 VLightspeedTM Series IXGX 12N90C IC25 = 24 AVCES(sat) = 3.0 Vtfi(typ) = 70 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 APLUS 247 (IXGX)ICM TC = 25

 7.1. Size:119K  ixys
 ixgh12n100u1.pdf pdf_icon

IXGH12N90C

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

 7.2. Size:119K  ixys
 ixgh12n100au1.pdf pdf_icon

IXGH12N90C

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

 7.3. Size:201K  ixys
 ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf pdf_icon

IXGH12N90C

GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG

MOSTRAR MÁS

Otros transistores... IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B , IXGH12N60BD1 , IXGH12N60C , IXGH12N60CD1 , MBQ60T65PES , IXGH15N120B , IXGH15N120BD1 , IXGH15N120C , IXGH15N120CD1 , IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 .

History: IXGA14N120B | MUBW40-12T7

 

 
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