FGA40T65SHDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA40T65SHDF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Qgⓘ - Carga total de la puerta, typ: 68 nC
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de FGA40T65SHDF IGBT
FGA40T65SHDF Datasheet (PDF)
fga40t65shdf.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40t65shd.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40t65uqdf.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga40n65smd.pdf

August 2014FGA40N65SMD650 V, 40 A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, induction heating, telecom, ESS
Otros transistores... FGA15N120ANTDTU , FGA180N33AT , FGA25N120ANTDTU , FGA3060ADF , FGA30S120P , FGA30T65SHD , FGA40S65SH , FGA40T65SHD , IRGB20B60PD1 , FGA40T65UQDF , FGA5065ADF , FGA50S110P , FGA6530WDF , FGA6540WDF , FGAF30S65AQ , FGAF40N60SMD , FGAF40S65AQ .
History: DM2G200SH12A | IXGX50N60A2D1 | APT44GA60B | IXGX120N60C2 | VS-GB50LP120N | MMG450WB120B6TC
History: DM2G200SH12A | IXGX50N60A2D1 | APT44GA60B | IXGX120N60C2 | VS-GB50LP120N | MMG450WB120B6TC



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