FGD3245G2-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGD3245G2-F085
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 150
Tensión máxima colector-emisor |Vce|, V: 450
Tensión máxima puerta-emisor |Vge|, V: 10
Colector de Corriente Continua a 25℃ |Ic|, A: 41
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.13
Tensión máxima de puerta-umbral |VGE(th)|, V: 2.2
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 2600
Carga total de la puerta (Qg), typ, nC: 23
Paquete / Cubierta: DPAK
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FGD3245G2-F085 Datasheet (PDF)
fgd3245g2-f085 fgb3245g2-f085.pdf
DATA SHEETwww.onsemi.comECOSPARK)2 320 mJ, 450 V,GN-Channel Ignition IGBTCOLLECTOR(FLANGE)EJEDEC TO-263ABFGD3245G2-F085,D2PAK-3 (TO-263, 3-LEAD)CASE 418AJFGB3245G2-F085COLLECTORGeneral Description G(FLANGE)The FGB3245G2-F085 and FGD3245G2 are N-channel IGBTs Edesigned in onsemis ECOSPARK-2 technology which helps inJEDEC TO-263AADPAK3 (TO-252 3 LD)elimi
fgd3245g2-f085v.pdf
FGD3245G2-F085VEcoSPARK) 2 Ignition IGBT320 mJ, 450 V, N-Channel Ignition IGBTFeatures SCIS Energy = 320 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive Low Saturation Voltage AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver Circuits High Curren
fgd3245g2-f085c.pdf
FGD3245G2-F085CEcoSPARK) 2 Ignition IGBT320 mJ, 450 V, N-Channel Ignition IGBTFeatures SCIS Energy = 320 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive Low Saturation Voltage AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver Circuits High Curren
Otros transistores... FGB7N60UNDF , FGD2736G3-F085 , FGD2736G3-F085V , FGD3040G2-F085C , FGB3040G2-F085C , FGD3040G2-F085V , FGD3050G2 , FGD3050G2V , RJP63K2DPP-M0 , FGB3245G2-F085 , FGD3245G2-F085C , FGD3245G2-F085V , FGD3325G2-F085 , FGD3440G2-F085V , FGD3N60UNDF , FGD5T120SH , FGH12040WD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ