FGD3245G2-F085V - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGD3245G2-F085V
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 450 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.13 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 2600 nS
Qgⓘ - Carga total de la puerta, typ: 23 nC
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de FGD3245G2-F085V - IGBT
FGD3245G2-F085V Datasheet (PDF)
fgd3245g2-f085 fgb3245g2-f085.pdf
DATA SHEETwww.onsemi.comECOSPARK)2 320 mJ, 450 V,GN-Channel Ignition IGBTCOLLECTOR(FLANGE)EJEDEC TO-263ABFGD3245G2-F085,D2PAK-3 (TO-263, 3-LEAD)CASE 418AJFGB3245G2-F085COLLECTORGeneral Description G(FLANGE)The FGB3245G2-F085 and FGD3245G2 are N-channel IGBTs Edesigned in onsemis ECOSPARK-2 technology which helps inJEDEC TO-263AADPAK3 (TO-252 3 LD)elimi
fgd3245g2-f085v.pdf
FGD3245G2-F085VEcoSPARK) 2 Ignition IGBT320 mJ, 450 V, N-Channel Ignition IGBTFeatures SCIS Energy = 320 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive Low Saturation Voltage AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver Circuits High Curren
fgd3245g2-f085c.pdf
FGD3245G2-F085CEcoSPARK) 2 Ignition IGBT320 mJ, 450 V, N-Channel Ignition IGBTFeatures SCIS Energy = 320 mJ at TJ = 25Cwww.onsemi.com Logic Level Gate Drive Low Saturation Voltage AEC-Q101 Qualified and PPAP CapableCOLLECTOR These Devices are Pb-Free and are RoHS CompliantApplicationsR1GATE Automotive Ignition Coil Driver Circuits High Curren
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2