FGH40N60SFDTU-F085 Todos los transistores

 

FGH40N60SFDTU-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH40N60SFDTU-F085
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 290 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Coesⓘ - Capacitancia de salida, typ: 190 pF
   Qgⓘ - Carga total de la puerta, typ: 121 nC
   Paquete / Cubierta: TO247

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FGH40N60SFDTU-F085 Datasheet (PDF)

 0.1. Size:803K  onsemi
fgh40n60sfdtu fgh40n60sfdtu-f085.pdf

FGH40N60SFDTU-F085
FGH40N60SFDTU-F085

IGBT - Field Stop 600 V, 40 AFGH40N60SFDTU,FGH40N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorswww.onsemi.comnew series of Field Stop IGBTs offer the optimum performance forAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturati

 3.1. Size:806K  fairchild semi
fgh40n60sfd.pdf

FGH40N60SFDTU-F085
FGH40N60SFDTU-F085

July 2008FGH40N60SFDtm600V, 40A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Low saturation voltage: VCE(sat) =2.3V @ IC = 40AInduction Heating, UPS, SMPS and PFC applications where High input impedancelow conduction and swi

 3.2. Size:435K  onsemi
fgh40n60sfd.pdf

FGH40N60SFDTU-F085
FGH40N60SFDTU-F085

March 2015FGH40N60SFD600 V, 40 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds field stopIGBTs offer the optimum performance for solar inverter, UPS, Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 Awelder, microwave oven, telecom, ESS and PFC applications High Input Impedancewhere low cond

Otros transistores... FGD3N60UNDF , FGD5T120SH , FGH12040WD , FGH15T120SMD , FGH20N60SFDTU , FGH20N60SFDTU-F085 , FGH30S150P , FGH40N60SFDTU , BT40T60ANF , FGH40N60SMD-F085 , FGH40N60SMDF-F085 , FGH40N65UFDTU , FGH40N65UFDTU-F085 , FGH40T100SMD , FGH40T120SMD-F155 , FGH40T120SMDL4 , FGH40T120SQDNL4 .

 

 
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