FGH40N60SMD-F085 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40N60SMD-F085
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 349 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 180 pF
Qgⓘ - Carga total de la puerta, typ: 119 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGH40N60SMD-F085 - IGBT
FGH40N60SMD-F085 Datasheet (PDF)
fgh40n60smd-f085.pdf
IGBT - Field Stop 600 V, 40 AFGH40N60SMD-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.FeaturesC Maximum Junction Temperature: TJ = 175C Positive Tem
fgh40n60smd.pdf
November 2010FGH40N60SMD600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, Welder and SMPS applications where low con- High curre
fgh40n60smdf.pdf
March 2011FGH40N60SMDFtm600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High
fgh40n60smd.pdf
April 2013FGH40N60SMD600 V, 40 A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new seriesof field stop 2nd generation IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for Easy Parallel Operatingmance for solar inverter, UPS, welder, telecom, ESS and PFC High C
fgh40n60smdf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40n60smdf-f085.pdf
IGBT - Field Stop600 V, 40 AFGH40N60SMDF-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductor newseries of Field Stop IGBTs offer the optimum performancewww.onsemi.comfor Automotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.VCES ICFeatures600 V 40 A Max Junction Temperature TJ = 175CC
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2