FGH40T100SMD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T100SMD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 333
Tensión máxima colector-emisor |Vce|, V: 1000
Tensión máxima puerta-emisor |Vge|, V: 25
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 42
Capacitancia de salida (Cc), typ, pF: 124
Carga total de la puerta (Qg), typ, nC: 265
Paquete / Cubierta: TO247
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FGH40T100SMD Datasheet (PDF)
fgh40t100smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t120smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t120smd fgh40t120smd-f155.pdf
IGBT - Field Stop, Trench1200 V, 40 AFGH40T120SMD,FGH40T120SMD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerthe optimum performance for hard switching application such as solarCinverter, UPS, welder and PFC applications.Features FS Trench Technology, Positive Temperature
fgh40t120sqdnl4.pdf
IGBT - Ultra Field StopFGH40T120SQDNL4This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the devicewww.onsemi
fgh40t120smdl4.pdf
IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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