FGH40T100SMD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T100SMD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 333 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 42 nS
Coesⓘ - Capacitancia de salida, typ: 124 pF
Qgⓘ - Carga total de la puerta, typ: 265 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGH40T100SMD - IGBT
FGH40T100SMD Datasheet (PDF)
fgh40t100smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t120smd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fgh40t120smd fgh40t120smd-f155.pdf
IGBT - Field Stop, Trench1200 V, 40 AFGH40T120SMD,FGH40T120SMD-F155Descriptionwww.onsemi.comUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerthe optimum performance for hard switching application such as solarCinverter, UPS, welder and PFC applications.Features FS Trench Technology, Positive Temperature
fgh40t120sqdnl4.pdf
IGBT - Ultra Field StopFGH40T120SQDNL4This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the devicewww.onsemi
fgh40t120smdl4.pdf
IGBT - FS, Trench1200 V, 40 AFGH40T120SMDL4DescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field stop trench IGBTs offerwww.onsemi.comthe optimum performance for hard switching application such as solarinverter, UPS, welder and PFC applications.VCES ICFeatures1200 V 40 A FS Trench Technology, Positive Temperature Coeffi
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